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- [3] Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 225 (03): : 345 - 352
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- [5] 355 AND 439 KEV RESONANCES IN REACTION 31P(P,GAMMA)32S NUCLEAR PHYSICS, 1963, 40 (03): : 438 - &
- [7] Doping of silicon with phosphorus using the 30Si(p, γ)31P resonant nuclear reaction PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (02): : 867 - 875
- [9] Differential cross sections measurement of 31P(p,pγ1)31P reaction for PIGE applications NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 383 : 152 - 155