ELECTRICALLY REPROGRAMMABLE NONVOLATILE SEMICONDUCTOR MEMORY.

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作者：

Tarui, Yasuo

Hayashi, Yutaka

Nagai, Kiyoko

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| 1600年 / 40期

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摘要：

Electrically reprogrammable nonvolatile semiconductor memories using avalanche injection of electrons and holes into a floating gate are described. The device structure and experimental memorizing characteristics of a two-junction type memory and a channel injection type memory are shown. The injection mechanisms of both types of memories are analyzed using conventional MOS transistors. The injection efficiency, writing speed and memory retention characteristics are measured and discussed.

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