NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN SILICON IMPLANTED WITH OXYGEN.

被引：0
|
作者：
Stoemenos, J. [1 ]
Margail, J. [1 ]
机构：
[1] Aristotle Univ of Thessaloniki, Thessaloniki, Greece, Aristotle Univ of Thessaloniki, Thessaloniki, Greece
来源：
Thin Solid Films | 1986年 / 135卷 / 01期
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D O I：
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学科分类号：
摘要：
SEMICONDUCTING SILICON
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页码：115 / 127
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