Molecular-beam epitaxy of BeTe layers on GaAs substrates

被引：0
|
作者：
Tournié, E. [1 ]
Bousquet, V. [1 ]
Faurie, J.-P. [1 ]
机构：
[1] Ctr. Rech. Sur l'Hetero-epitaxie S., Ctr. Natl. Rech. Sci. (CRHEA/C., F-06560 Valbonne, France
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：494 / 497
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