Molecular-beam epitaxy of BeTe layers on GaAs substrates

被引：0
|
作者：
Tournié, E. [1 ]
Bousquet, V. [1 ]
Faurie, J.-P. [1 ]
机构：
[1] Ctr. Rech. Sur l'Hetero-epitaxie S., Ctr. Natl. Rech. Sci. (CRHEA/C., F-06560 Valbonne, France
来源：
Journal of Crystal Growth | 1999年 / 201卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：494 / 497
相关论文
共 50 条
  • [1] Molecular-beam epitaxy of BeTe layers on GaAs substrates
    Tournié, E
    Bousquet, V
    Faurie, JP
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 494 - 497
  • [2] Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction
    Tournie, E
    Bousquet, V
    Faurie, JP
    APPLIED PHYSICS LETTERS, 1998, 72 (22) : 2859 - 2861
  • [3] MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF INSB LAYERS ON GAAS SUBSTRATES
    SODERSTROM, JR
    CUMMING, MM
    YAO, JY
    ANDERSSON, TG
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (03) : 337 - 343
  • [4] INVESTIGATION OF INAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS SUBSTRATES
    DVORYANKINA, GG
    DVORYANKIN, VF
    PETROV, AG
    KUDRYASHOV, AA
    POROTIKOV, AP
    VARAKSIN, GA
    KHUSID, LB
    INORGANIC MATERIALS, 1987, 23 (11) : 1569 - 1574
  • [5] GAAS MOLECULAR-BEAM EPITAXY ON BE IMPLANTED GAAS-LAYERS
    TAKAMORI, A
    MIYAUCHI, E
    ARIMOTO, H
    BAMBA, Y
    HASHIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08): : L520 - L522
  • [6] Molecular-beam epitaxy of InAs on anodized GaAs substrates
    Morishita, Y
    Saitoh, T
    Kawai, S
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 638 - 642
  • [7] Molecular-beam epitaxy of InAs on anodized GaAs substrates
    Morishita, Yoshitaka
    Saitoh, Tsuyoshi
    Kawai, Shingo
    Journal of Crystal Growth, 1999, 201 : 638 - 642
  • [8] METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF GAAS ON PATTERNED GAAS SUBSTRATES
    MARX, D
    ASAHI, H
    LIU, XF
    OKUNO, Y
    INOUE, K
    GONDA, S
    SHIMOMURA, S
    HIYAMIZU, S
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 204 - 209
  • [9] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    LEOPOLD, DJ
    BALLINGALL, JM
    WROGE, ML
    APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1473 - 1474
  • [10] Phase stability of CdO on zincblende layers grown on GaAs substrates by metalorganic molecular-beam epitaxy
    Ashrafi, ABMA
    Suemune, I
    Kumano, H
    Ok, YW
    Seong, TY
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 307 - 312
12345