Simulation of the MO film deposition in the magnetron sputtering discharge

被引:0
|
作者
Mitsubishi Chemical Corp, Yokohama, Japan [1 ]
机构
来源
Thin Solid Films | / 1-2卷 / 225-229期
关键词
Computer simulation - Film growth - Magnetooptical effects - Magnetron sputtering - Monte Carlo methods - Sputter deposition - Ternary systems - Thin films;
D O I
暂无
中图分类号
学科分类号
摘要
The Monte Carlo simulation code ACAT-DIFFUSE-GAS has been developed in order to simulate the whole system of a planar magnetron sputtering discharge. The atomic collisions in the Tb-Fe-Co alloy cathode, which lead to sputtering and reflection, are simulated by the ACAT-DIFFUSE routine which includes the compositional change induced by ion influence. The thermalization of sputtered Tb, Fe and Co atoms and reflected Ar atoms in the background Ar gas within the planar magnetron sputtering discharge are simulated by the GAS routine, using the Monte Carlo technique. It is found that the deposited composition rate of Tb, Fe and Co depends strongly on the background pressure. The appreciable amount of energetic reflected Ar atoms transmit at the low pressure and deposit their energies on the magneto-optical film.
引用
收藏
相关论文
共 50 条
  • [1] Simulation of the MO film deposition in the magnetron sputtering discharge
    Ishida, M
    Yamaguchi, Y
    Yamamura, Y
    THIN SOLID FILMS, 1998, 334 (1-2) : 225 - 229
  • [2] Triode magnetron sputtering TiN film deposition
    Fontana, L.C.
    Muzart, J.L.R.
    Surface and Coatings Technology, 1999, 114 (01): : 7 - 12
  • [3] SiC film deposition by DC magnetron sputtering
    Gou, L
    Qi, CS
    Ran, JG
    Zheng, CQ
    THIN SOLID FILMS, 1999, 345 (01) : 42 - 44
  • [4] Triode magnetron sputtering TiN film deposition
    Fontana, LC
    Muzart, JLR
    SURFACE & COATINGS TECHNOLOGY, 1999, 114 (01): : 7 - 12
  • [5] Deposition rate simulation of unbalanced magnetron sputtering
    Hosokawa, Yoshiyuki
    2002, Kobe Steel Ltd (52): : 35 - 38
  • [6] Improvement of CdTe solar cell performance with discharge control during film deposition by magnetron sputtering
    Wendt, R
    Fischer, A
    Grecu, D
    Compaan, AD
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) : 2920 - 2925
  • [7] Computer simulation of gas rarefaction effects and film deposition characteristics in a magnetron sputtering apparatus
    Kobayashi, T
    APPLIED SURFACE SCIENCE, 2001, 169 (169-170) : 405 - 409
  • [8] Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering
    Zhu, Guo
    Sun, Jiangping
    Zhang, Libin
    Gan, Zhiyin
    JOURNAL OF CRYSTAL GROWTH, 2018, 492 : 60 - 66
  • [9] Simulation Method of Magnetron Sputtering Film Growth
    Wang X.-Q.
    Zhao J.
    Liu J.-Y.
    Surface Technology, 2022, 51 (02): : 156 - 164
  • [10] ZnO thin film deposition with pulsed magnetron sputtering
    Ziaja, Jan
    PRZEGLAD ELEKTROTECHNICZNY, 2007, 83 (11): : 235 - 239