Luminescence of three- particle exciton- impurity complexes in !SiC(4H)

被引:0
|
作者
GORBAN IS
GUBANOV VA
机构
来源
| 1972年 / 13卷 / 07期
关键词
SILICON CARBIDE; Electronic Properties - SILICON CARBIDE; Impurities;
D O I
暂无
中图分类号
学科分类号
摘要
The object of the present work was to investigate in detail the luminescence spectra of three- particle exciton- impurity complexes in !- SiC(4H) crystals and on the basis of the information obtained to resolve the question of the nature of the impurities at which these complexes are formed. See also English translation in Sov Phys-Solid State v 13 n 7 Jan 1972 p 1741-3
引用
收藏
页码:2076 / 80
相关论文
共 50 条
  • [21] Thermal expansion of 4H and 6H SiC from 5 K to 340 K
    Neumeier, J. J.
    Shvyd'ko, Yu. V.
    Haskel, D.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2024, 187
  • [22] On the Luminescence and Driving Force of Stacking Faults in 4H-SiC
    Caldwell, J. D.
    Giles, A. J.
    Stahlbush, R. E.
    Ancona, M. G.
    Glembocki, O. J.
    Hobart, K. D.
    Hull, B. A.
    Liu, K. X.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 277 - +
  • [23] Electrochemistry of anodic etching of 4H and 6H-SiC in fluoride solution of pH 3
    van Dorp, D. H.
    Sattler, J. J. H. B.
    den Otter, J. H.
    Kelly, J. J.
    ELECTROCHIMICA ACTA, 2009, 54 (26) : 6269 - 6275
  • [24] Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach
    Kang, Kyung-Han
    Eun, Taihee
    Jun, Myong-Chul
    Lee, Byeong-Joo
    JOURNAL OF CRYSTAL GROWTH, 2014, 389 : 120 - 133
  • [25] Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations
    Holiatkina, M.
    Poeppl, A.
    Kalabukhova, E.
    Lancok, J.
    Savchenko, D.
    JOURNAL OF APPLIED PHYSICS, 2023, 134 (14)
  • [26] Ab initio study of substitutional impurity atoms in 4H-SiC
    Miyata, Masanori
    Higashiguchi, Yoshitsune
    Hayafuji, Yoshinori
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
  • [27] Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers
    Barbara E. Landini
    Journal of Electronic Materials, 2000, 29 : 384 - 390
  • [28] Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
    Danno, Katsunori
    Saitoh, Hiroaki
    Seki, Akinori
    Shirai, Takayuki
    Suzuki, Hiroshi
    Bessho, Takeshi
    Kawai, Yoichiro
    Kimoto, Tsunenobu
    APPLIED PHYSICS EXPRESS, 2012, 5 (03)
  • [29] Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers
    Landini, BE
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (03) : 384 - 390
  • [30] Equilibrium crystal shapes for 6H AND 4H SiC grown on non-planar substrates
    Nordell, N
    Karlsson, S
    Konstantinov, AO
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 130 - 134