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- [4] MANY-EXCITON IMPURITY COMPLEXES IN 6H-SIC SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 453 - 454
- [6] LUMINESCENCE OF 4H SIC AND LOCATION OF CONDUCTION-BAND MINIMA IN SIC POLYTYPES PHYSICAL REVIEW, 1965, 137 (5A): : 1515 - &
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- [10] Luminescence and EPR characterization of vanadium doped semi-insulating 4H SiC SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 651 - 654