RECOMBINATION AT REPULSIVE CENTERS IN Au-DOPED Ge AT LOW TEMPERATURES.

被引：0
|
作者：
Morozova, V.A.
Zheludeva, S.I.
Kurova, I.A.
机构：
来源：
| 1600年 / 10期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING GERMANIUM
引用
收藏
相关论文
共 50 条
  • [41] A low-resistance Pd/Ge/Ti/Au ohmic contact to a high-low doped GaAs field-effect transistor
    Kwak, JS
    Baik, HK
    Lee, JL
    Park, CG
    Kim, H
    Suh, KS
    THIN SOLID FILMS, 1996, 290 : 497 - 502
  • [42] ELECTRON-PHONON SCATTERING PARAMETERS AND LATTICE THERMAL-CONDUCTIVITY OF A DOPED SEMICONDUCTOR AT LOW-TEMPERATURES - APPLICATION TO P-DOPED GE
    DUBEY, KS
    ACTA PHYSICA POLONICA A, 1981, 59 (03) : 311 - 323
  • [43] Low thermal expansion behavior and transport properties of Ni and Ge co-doped manganese nitride materials at cryogenic temperatures
    Rongjin Huang
    Xinxin Chu
    Zhixiong Wu
    Laifeng Li
    Xiangdong Xu
    Applied Physics A, 2010, 99 : 465 - 469
  • [44] Low thermal expansion behavior and transport properties of Ni and Ge co-doped manganese nitride materials at cryogenic temperatures
    Huang, Rongjin
    Chu, Xinxin
    Wu, Zhixiong
    Li, Laifeng
    Xu, Xiangdong
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (02): : 465 - 469
  • [45] STABILIZATION OF THE ORIENTATION OF JAHN-TELLER DISTORTIONS OF AU(GA)O ACCEPTORS IN GAAS AT LOW-TEMPERATURES AND REORIENTATION OF THESE ACCEPTORS DURING RECOMBINATION
    AVERKIEV, NS
    ASHIROV, TK
    GUTKIN, AA
    OSIPOV, EB
    SEDOV, VE
    TSATSULNIKOV, AF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (11): : 1184 - 1189
  • [46] Anomalous Electrical Transport at Non-Ideal Au/Epitaxial n-GaAs Schottky Junctions on n(+)-Ge Substrates at Low Temperatures
    Padha, N.
    Sharma, M.
    Chadha, R.
    Sachdeva, R.
    Krupanidhi, S. B.
    AFRICAN REVIEW OF PHYSICS, 2008, 2 : 74 - 74
  • [47] Pd-Ge-Au based hybrid ohmic contacts to high-low doped GaAs field-effect transistor
    Kwak, JS
    Lee, JL
    Baik, BK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9A): : 5451 - 5458
  • [48] Pd-Ge-Au based hybrid ohmic contacts to high-low doped GaAs field-effect transistor
    Kwak, Joon Seop
    Lee, Jong-Lam
    Baik, Hong Koo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (9 A): : 5451 - 5458
  • [49] ROLE OF BOUNDARY SCATTERING IN THE PHONON DRAG THERMOELECTRIC-POWER AND LATTICE THERMAL-CONDUCTIVITY OF A DOPED SEMICONDUCTOR AT LOW-TEMPERATURES - APPLICATION TO PHOSPHORUS DOPED GE
    DUBEY, KS
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 111 (01): : K49 - K54
  • [50] Dopant-assisted stabilization of negatively charged single nitrogen-vacancy centers in phosphorus-doped diamond at low temperatures
    Geng, Jianpei
    Shalomayeva, Tetyana
    Gryzlova, Mariia
    Mukherjee, Amlan
    Santonocito, Santo
    Dzhavadzade, Dzhavid
    Dasari, Durga Bhaktavatsala Rao
    Kato, Hiromitsu
    Stoehr, Rainer
    Denisenko, Andrej
    Mizuochi, Norikazu
    Wrachtrup, Jorg
    NPJ QUANTUM INFORMATION, 2023, 9 (01)
12345