VAPOR PHASE EQUILIBRIA OF ARSENIC-TRIOXIDE OVER GALLIUM ARSENIDE.

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作者
Teramoto, Iwao [1 ]
Takagi, Hiromitsu [1 ]
Kano, Gota [1 ]
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[1] Research Laboratory, Matsushita Electronics Corporation, Takatsuki, OK, Japan
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15
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[31]   TIN DOPING OF GALLIUM-ARSENIDE DURING VAPOR-PHASE EPITAXY [J].
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MATTHIESEN, DH .
JOURNAL OF CRYSTAL GROWTH, 1994, 137 (1-2) :255-258
[37]   DEPTH PROFILE OF CONCENTRATION OF DEEP-LEVEL IMPURITIES IN VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE GROWN UNDER VARIOUS ARSENIC VAPOR-PRESSURES [J].
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[39]   DEPTH PROFILE OF A CONCENTRATION OF DEEP-LEVEL IMPURITIES IN VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE GROWN UNDER VARIOUS ARSENIC VAPOR-PRESSURES [J].
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