Weak bond/dangling bond conversion model for light-induced defects in a-Si:H

被引：0

作者：

Santos, P.V. ^{[1
]}

Jackson, W.B. ^{[1
]}

机构：

[1] Xerox Palo Alto Research Cent, Palo Alto, United States

来源：

Journal of Non-Crystalline Solids | 1991年 / 137-38卷 / pt 1期

关键词：

Electronic Properties - Mathematical Models - Semiconducting Silicon - Radiation Effects - Solids - Defects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The kinetics of light induced defect generation was investigated by light soaking experiments (i) under constant photocurrent and (ii) at low temperatures and under constant illumination intensity. For constant density of photogenerated carriers, the rate of defect formation decreases as more defects are formed, indicating the existence of a distribution of defect formation energies in the amorphous network.

引用

页码：203 / 206

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