ENSEMBLE MONTE CARLO SIMULATION OF A VELOCITY-MODULATION FIELD EFFECT TRANSISTOR (VMT).

被引：0
|
作者：
Kizilyalli, I.C. [1 ]
Hess, K. [1 ]
机构：
[1] Univ of Illinois, Urbana, IL, USA, Univ of Illinois, Urbana, IL, USA
来源：
| 1600年 / 26期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Monte Carlo simulation of porous electrodes in the constant voltage ensemble
    Kiyohara, Kenji
    Asaka, Kinji
    JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (43): : 15903 - 15909
  • [32] Gibbs ensemble Monte Carlo simulation of adsorption equilibrium of methane
    Zhou, J
    Wang, WC
    ACTA PHYSICO-CHIMICA SINICA, 2001, 17 (08) : 723 - 727
  • [33] Reaction Ensemble Monte Carlo Simulation of Complex Molecular Systems
    Rosch, Thomas W.
    Maginn, Edward J.
    JOURNAL OF CHEMICAL THEORY AND COMPUTATION, 2011, 7 (02) : 269 - 279
  • [34] NPT ENSEMBLE MONTE-CARLO SIMULATION OF ETHANOL IN WATER
    LILLY, AC
    BEERS, FJ
    SCHUG, JC
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 1990, 68 (1-2): : 69 - 75
  • [35] GRAND CANONICAL ENSEMBLE MONTE CARLO SIMULATION ON A TRANSPUTER ARRAY
    Zara, Stephen J.
    Nicholson, David
    MOLECULAR SIMULATION, 1990, 5 (3-4) : 245 - 261
  • [36] Quantum Monte Carlo simulation in the canonical ensemble at finite temperature
    Van Houcke, K.
    Rombouts, S. M. A.
    Pollet, L.
    PHYSICAL REVIEW E, 2006, 73 (05):
  • [37] Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire structure under the effect of terahertz electric field
    Borzdov, Andrei V.
    Borzdov, Vladimir M.
    V'yurkov, Vladimir V.
    INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016, 2016, 10224
  • [38] Monte Carlo simulation of Touschek effect
    Xiao, Aimin
    Borland, Michael
    PHYSICAL REVIEW SPECIAL TOPICS-ACCELERATORS AND BEAMS, 2010, 13 (07):
  • [39] Si/Si1-xGex heterostructures: electron transport and field-effect transistor operation using Monte Carlo simulation
    J Appl Phys, 8 (3911):
  • [40] Si/Si1-xGex heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation
    Dollfus, P
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) : 3911 - 3916
12345