ENSEMBLE MONTE CARLO SIMULATION OF A VELOCITY-MODULATION FIELD EFFECT TRANSISTOR (VMT).

被引:0
|
作者
Kizilyalli, I.C. [1 ]
Hess, K. [1 ]
机构
[1] Univ of Illinois, Urbana, IL, USA, Univ of Illinois, Urbana, IL, USA
来源
| 1600年 / 26期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] ENSEMBLE MONTE-CARLO SIMULATION OF A VELOCITY-MODULATION FIELD-EFFECT TRANSISTOR (VMT)
    KIZILYALLI, IC
    HESS, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (09): : 1519 - 1524
  • [2] VELOCITY-MODULATION TRANSISTOR (VMT) - A NEW FIELD-EFFECT TRANSISTOR CONCEPT
    SAKAKI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L381 - L383
  • [3] ENSEMBLE MONTE-CARLO SIMULATION OF VELOCITY MODULATION TRANSISTORS (VMT) AND REAL SPACE TRANSFER (NERFET, CHINT) DEVICES
    KIZILYALLI, IC
    HESS, K
    SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (03) : 287 - 288
  • [4] Monte Carlo simulation of velocity modulation transistors
    Sampedro, C
    Godoy, A
    Gámiz, F
    Roldan, J
    Carceller, JE
    Cartujo, P
    2005 Spanish Conference on Electron Devices, Proceedings, 2005, : 377 - 380
  • [5] Monte Carlo Study of an InAlAs/InGaAs Velocity Modulation Transistor
    Vasallo, Beatriz G.
    Gonzalez, Tomas
    Pardo, Daniel
    Mateos, Javier
    PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, 2009, : 128 - 131
  • [6] Monte Carlo simulation of response time for velocity modulation transistors
    Maezawa, Koichi
    Mizutani, Takashi
    Tomizawa, Masaaki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (03): : 757 - 760
  • [7] Three-dimensional Monte Carlo simulation of bulk fin field effect transistor
    王骏成
    杜刚
    魏康亮
    张兴
    刘晓彦
    Chinese Physics B, 2012, (11) : 423 - 428
  • [8] Three-dimensional Monte Carlo simulation of bulk fin field effect transistor
    Wang Jun-Cheng
    Du Gang
    Wei Kang-Liang
    Zhang Xing
    Liu Xiao-Yan
    CHINESE PHYSICS B, 2012, 21 (11)
  • [9] Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation
    Rengel, R
    Mateos, J
    González, T
    Pardo, D
    Dambrine, G
    Danneville, F
    Martín, MJ
    Unsolved Problems of Noise and Fluctuations, 2005, 800 : 497 - 502
  • [10] MONTE-CARLO SIMULATION OF RESPONSE-TIME FOR VELOCITY MODULATION TRANSISTORS
    MAEZAWA, K
    MIZUTANI, T
    TOMIZAWA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (03): : 757 - 760