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- [5] Comparison of silicon and silicon carbide semiconductors for a 10 kV switching application PESC 04: 2004 IEEE 35TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, CONFERENCE PROCEEDINGS, 2004, : 572 - 578
- [6] Static and dynamic characterization of Silicon Carbide bipolar junction transistor IECON'03: THE 29TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1 - 3, PROCEEDINGS, 2003, : 1173 - 1178
- [7] Comparison between Schottky diodes with oxide ramp termination on silicon carbide and diamond SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 865 - +
- [8] Optimized 1200V silicon trench IGBTs with silicon carbide Schottky diodes IAS 2000 - CONFERENCE RECORD OF THE 2000 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-5, 2000, : 2928 - 2933
- [9] Switching Behavior of Silicon Carbide JFET: an Experimental Analysis 2017 INTERNATIONAL CONFERENCE ON GREEN ENERGY & CONVERSION SYSTEMS (GECS), 2017,
- [10] EFFECT OF OXIDATION ON WETTING BEHAVIOR BETWEEN SILICON AND SILICON CARBIDE 7TH INTERNATIONAL SYMPOSIUM ON HIGH-TEMPERATURE METALLURGICAL PROCESSING, 2016, : 237 - 242