Effect of Ionized Intrinsic Point Defects on the Carrier Concentration in Hg1 - xCdxTe.

被引：0

作者：

Lutsiv, R.V.

Petrov, P.P.

Rud', N.A.

Matviiv, M.V.

Sol'skii, I.M.

机构：

来源：

Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy | 1976年 / 12卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM2 [电工材料]; TN [电子技术、通信技术];

学科分类号：

0805 ; 080502 ; 080801 ; 0809 ;

摘要：

Calculations are performed which show that the presence of ionized intrinsic point defects in Hg//1// minus //xCd//xTe affects the electron concentration in the temperature range from 77 to 300 degree K. It is also shown that the presence of such defects in Hg//1// minus //xCd//xTe shifts the intrinsic conductivity range toward higher temperatures.

引用

页码：830 / 834

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