Electrochemical deposition of Cu/Ni multilayers of nanometric thickness on GaAs

Multilayered Cu/(0.9 Ni + 0.1 Cu) films are obtained on the (100) face of gallium arsenide by pulse electrolysis from a binary copper-nickel acetate electrolyte. The average thickness of the layers is up to 1.4 nm, as found by radiography. The study shows that the deposition of the layers proceeds epitaxially. As the thickness of the film increases, the degree of epitaxy falls off, but the orientation effect of the substrate remains even after 2000 pairs of layers deposited.