INFRARED OPTICAL GUIDED WAVES IN InxGa1-xAs GROWN on GaAs.

被引:0
|
作者
Inoue, Masataka
Sugino, Takashi
Shirafuji, Junji
Inuishi, Yoshio
机构
来源
Technology Reports of the Osaka University | 1976年 / 26卷 / 1276-1307期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
WAVEGUIDES
引用
收藏
页码:169 / 174
相关论文
共 50 条
  • [31] THREADING DISLOCATIONS IN INXGA1-XAS/GAAS HETEROSTRUCTURES
    TAMURA, M
    HASHIMOTO, A
    NAKATSUGAWA, Y
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3398 - 3405
  • [32] Electrical, optical and alloy scattering studies of MOCVD grown InxGa1-xAs epitaxial layers on GaAs substrates
    Pal, R
    Durai, L
    Srinivasan, T
    Singh, M
    Agarwal, SK
    Bose, DN
    SOLID STATE PHENOMENA, 1997, 55 : 198 - 200
  • [33] Optical and Electrical Properties of Bulk-grown Ternary InxGa1-xAs
    Yeo, Y. K.
    Bergstrom, A. C.
    Hengehold, R. L.
    Wei, J. W.
    Guha, S.
    Gonzalez, L. P.
    Rajagopalan, G.
    Ryu, Mee-Yi
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (05) : 1267 - 1273
  • [34] Raman scattering in InxGa1-xAs/GaAs superlattices grown by molecular beam epitaxy
    Constant, M
    Matrullo, N
    Lorriaux, A
    Boussekey, L
    JOURNAL OF RAMAN SPECTROSCOPY, 1996, 27 (3-4) : 225 - 229
  • [35] Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut
    Dept. of Electron. and Elec. Eng., Univ. Sheffield, Mappin St., S1 3JD, Sheffield, United Kingdom
    不详
    不详
    J Cryst Growth, (1085-1088):
  • [36] Optical properties of InxGa1-xAs/GaAs MQW structures on (111)B GaAs grown by MBE:: dependence on substrate miscut
    Hopkinson, M
    Sánchez, JJ
    Gutiérrez, M
    González, D
    Aragón, G
    Izpura, I
    García, R
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1085 - 1088
  • [37] SELECTIVE EPITAXY OF GAAS, ALXGA1-XAS, AND INXGA1-XAS
    KUECH, TF
    GOORSKY, MS
    TISCHLER, MA
    PALEVSKI, A
    SOLOMON, P
    POTEMSKI, R
    TSAI, CS
    LEBENS, JA
    VAHALA, KJ
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 116 - 128
  • [38] Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers
    Luyo-Alvarado, J
    Santana-Aranda, MA
    Meléndez-Lira, M
    López-López, M
    Méndez, VH
    Vidal, MA
    Yonezu, H
    THIN SOLID FILMS, 2000, 373 (1-2) : 37 - 40
  • [39] Growth of InxGa1-xAs Films on GaAs (100): Inserting an Ultrathin InxGa1-xAs Buffer Using a Surface Technology
    Fang, Qiuyue
    Zhao, Lei
    Liu, Yuhua
    Guo, Zuoxing
    Han, Shuang
    Zhao, Liang
    SURFACE AND INTERFACE ANALYSIS, 2025, 57 (02) : 180 - 190
  • [40] Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates
    Chyi, JI
    Shieh, JL
    Pan, JW
    Lin, RM
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8367 - 8370