Transition from edge to vertical cavity operation of tunnel contact AlGaAs-GaAs-InGaAs quantum well heterostructure lasers

被引：0
作者：
Univ of Illinois at Urbana-Champaign, Urbana, United States [1 ]
机构：
来源：
Appl Phys Lett | / 7卷 / 797-799期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction
    Li, Yajie
    Wang, Pengfei
    Meng, Fangyuan
    Yu, Hongyan
    Zhou, Xuliang
    Wang, Huolei
    Pan, Jiaoqing
    [J]. SEMICONDUCTORS, 2018, 52 (16) : 2017 - 2021
  • [22] MILLIMETER-WAVE POWER OPERATION OF AN ALGAAS/INGAAS/GAAS QUANTUM WELL MISFET
    KIM, B
    MATYI, RJ
    WURTELE, M
    BRADSHAW, K
    KHATIBZADEH, MA
    TSERNG, HQ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2236 - 2242
  • [23] MOCVD growth of 980nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine
    Dong, JR
    Teng, JH
    Chua, SJ
    Foo, BC
    Wang, YJ
    Yin, R
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) : 59 - 62
  • [24] EXPERIMENTAL GAIN CHARACTERISTICS AND BARRIER LASING IN STRAINED-LAYER INGAAS-GAAS-ALGAAS QUANTUM-WELL HETEROSTRUCTURE LASERS
    COLEMAN, JJ
    BEERNINK, KJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) : 1879 - 1882
  • [25] WAVELENGTH SWITCHING IN NARROW OXIDE STRIPE INGAAS-GAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE LASERS
    BEERNINK, KJ
    ALWAN, JJ
    COLEMAN, JJ
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (19) : 2076 - 2078
  • [26] High-efficient carbon-doped InGaAs/AlGaAs/GaAs quantum well lasers
    Li, HX
    Reinhardt, F
    Birch, L
    Bradford, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 181 - 184
  • [27] INTEGRATED EXTERNAL CAVITY GAAS/ALGAAS LASERS USING SELECTIVE QUANTUM WELL DISORDERING
    WERNER, J
    KAPON, E
    STOFFEL, NG
    COLAS, E
    SCHWARZ, SA
    SCHWARTZ, CL
    ANDREADAKIS, N
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (06) : 540 - 542
  • [28] HIGHLY COHERENT LONG CAVITY GAAS/ALGAAS SINGLE-QUANTUM-WELL LASERS
    LARSSON, A
    ANDREKSON, PA
    JONSSON, B
    LINDSTROM, C
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (09) : 2013 - 2018
  • [29] HIGH-POWER OPERATION OF STRAINED INGAAS ALGAAS SINGLE QUANTUM-WELL LASERS
    MOSER, A
    OOSENBRUG, A
    LATTA, EE
    FORSTER, T
    GASSER, M
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (21) : 2642 - 2644
  • [30] ALGAAS/INGAAS/GAAS QUANTUM-WELL DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
    RUDEN, PP
    SHUR, M
    AKINWANDE, AI
    NOHAVA, JC
    GRIDER, DE
    BAEK, JH
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (10) : 2171 - 2175
12345