Effect of shunt resistance on the electrical characteristics of Schottky barrier diodes

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作者：

Univ Coll of Science and Technology, Calcutta, India ^{[1
]}

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来源：

J Phys D | / 3卷 / 823-829期

关键词：

Capacitance - Current voltage characteristics - Electric contacts - Electric properties - Electric resistance - Oxides - Semiconductor doping;

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摘要：

The electrical characteristics of Schottky barrier diodes were studied considering the effect of shunt resistance. Both the DC and the AC behaviour of the device were investigated. It was found that the shunt resistance has a remarkable effect at low bias in contrast to the series resistance which influences the electrical characteristics at large bias. The standard evaluation techniques based on the DC characteristics are found to be inaccurate in the presence of the shunt resistance. Also, the AC conductance and capacitance of the device are significantly influenced, making our previously developed model limited in the presence of a shunt resistance. The well-known conductance and capacitance techniques for the characterization of these devices seem to be inapplicable at low bias because of the above-mentioned parasitic effect.

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