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- [2] TEM INVESTIGATIONS OF LP-MOVPE GROWN GAAS/GE HETEROSTRUCTURES INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 399 - 402
- [4] Deep level trap characterization heterointerface grown by LP-MOVPE COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 877 - 880
- [5] Ordering effects in InGaP/GaAs and InGaAsP/GaAs heterostructures grown by LP-MOVPE NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1996, 18 (08): : 975 - 983
- [6] Characterization of InGaN single layers and quantum wells grown by LP-MOVPE PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01): : 311 - 314
- [10] Mosaic structure and cathodoluminescence of GaN epilayer grown by LP-MOVPE GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 207 - 211