New Bilayer Positive Photoresist for 193 nm Photolithography

被引：0
|
作者：
Kim, Young-Dab
Park, Sang-Jin
Lee, Haiwon
Kim, Eung-Ryul
Choi, Sang-Jun
Lee, Si-Hyeung
机构：
[1] Department of Chemistry, Hanyang University, Seoul 133-791, Korea, Republic of
[2] Semiconductor R. and D. Center, Samsung Electronics, Nongseo-Ri Kiheung-Eup, Youngin-City, Kyungki-Do 449-900, Korea, Republic of
来源：
Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals | / 327卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：279 / 282
相关论文
共 50 条
  • [1] New bilayer positive photoresist for 193 nm photolithography
    Kim, YD
    Park, SJ
    Lee, H
    Kim, ER
    Choi, SJ
    Lee, SH
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1999, 327 : 279 - 282
  • [2] New single layer positive photoresists for 193 nm photolithography
    Okoroanyanwu, U
    Shimokawa, T
    Byers, J
    Medeiros, D
    Willson, CG
    Niu, QSJ
    Frechet, JMJ
    Allen, R
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 92 - 103
  • [3] Chitosan as a Water-Developable 193 nm Photoresist for Green Photolithography
    Sysova, Olha
    Durin, Paule
    Gablin, Corinne
    Leonard, Didier
    Teolis, Alexandre
    Trombotto, Stephane
    Delair, Thierry
    Berling, Dominique
    Servin, Isabelle
    Tiron, Raluca
    Bazin, Arnaud
    Leclercq, Jean-Louis
    Chevolot, Yann
    Soppera, Olivier
    ACS APPLIED POLYMER MATERIALS, 2022, 4 (06): : 4508 - 4519
  • [4] PHOTOLITHOGRAPHY AT 193 NM
    ROTHSCHILD, M
    GOODMAN, RB
    HARTNEY, MA
    HORN, MW
    KUNZ, RR
    SEDLACEK, JHC
    SHAVER, DC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2989 - 2996
  • [5] Thin bilayer resists approach for 193nm and future photolithography
    Hishiro, Yoshi
    Hyatt, Michael
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U1154 - U1163
  • [6] Thin bilayer resists for 193nm and future photolithography II
    Hishiro, Yoshi
    Hyatt, Michael
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIV, 2007, 6519
  • [7] Single layer chemical vapor deposition photoresist for 193 nm deep ultraviolet photolithography
    Nault, M
    Weidman, T
    Sugiarto, D
    Mui, D
    Lee, C
    Yang, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3730 - 3733
  • [8] Positive bilayer resists for 248 and 193 nm lithography
    Sooriyakumaran, R
    Wallraff, GM
    Larson, CE
    Fenzel-Alexander, D
    DiPietro, RA
    Opitz, J
    Hofer, DC
    LaTulipe, DC
    Simons, JP
    Lin, QH
    Katnani, AD
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 219 - 227
  • [9] Photoresist materials for 157-nm photolithography
    Sarantopoulou, E
    Cefalas, AC
    Argitis, P
    Gogolides, E
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2001, 15 (1-2): : 159 - 161
  • [10] Silylated photoresist profiles imaged at 193 nm
    Hargreaves, John
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (03):
12345