MOVPE growth and structural characterization of AlxGa 1-xN

被引:0
|
作者
Ruffenach-Clur, S. [1 ]
Briot, Olivier [1 ]
Gil, Bernard [1 ]
Aulombard, Roger-Louis [1 ]
Rouviere, J.L. [2 ]
机构
[1] Groupe d'Etude des Semiconducteurs, GES-CNRS, France
[2] CEA/Grenoble, Dept. Rech. Fond. la Matiere Cond., SP2M, France
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Critical issues in AlxGa1-xN growth
    Amano, H
    Akasaki, I
    OPTICAL MATERIALS, 2002, 19 (01) : 219 - 222
  • [32] MOCVD growth of n-AlxGa1-xN
    Guo, SP
    Pophristic, M
    Peres, B
    Ferguson, I
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II, 2002, 2002 (03): : 141 - 149
  • [33] Growth and characterization of modulation-doped AlxGa1-xN/GaN heterostructures
    Shen, B
    Zhang, R
    Shi, Y
    Zheng, YD
    Someya, T
    Arakawa, Y
    CHINESE PHYSICS LETTERS, 2001, 18 (01): : 129 - 131
  • [34] High-temperature electrical transport in AlxGa 1-xN/GaN modulation doped field-effect transistors
    Lu, Changzhi
    Xie, Xuesong
    Zhu, Xiudian
    Wang, Dongfeng
    Khan, Arif
    Diagne, Ibrahima
    Mohammad, S. Noor
    Journal of Applied Physics, 2006, 100 (11):
  • [35] Growth and characterization of BxGa1-xN on 6H-SiC (0001) by MOVPE
    Wei, CH
    Xie, ZY
    Edgar, JH
    Zeng, KC
    Lin, JY
    Jiang, HX
    Ignatiev, C
    Chaudhuri, J
    Braski, DN
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G3.79
  • [36] Structural and optical properties of AlxGa1-xN nanowires
    Pierret, A.
    Bougerol, C.
    den Hertog, M.
    Gayral, B.
    Kociak, M.
    Renevier, H.
    Daudin, B.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (10): : 868 - 873
  • [37] Effect of GaN template thickness and morphology on AlxGa1-xN (0 < x < 0.2) growth by MOVPE
    Halidou, I.
    Toure, A.
    Fouzri, A.
    Ramonda, M.
    El Jani, B.
    APPLIED SURFACE SCIENCE, 2013, 280 : 660 - 665
  • [38] Electronic and structural properties of zincblende AlxGa1-xN
    B.-T. Liou
    Applied Physics A, 2007, 86 : 539 - 543
  • [39] Electronic and structural properties of zincblende AlxGa1-xN
    Liou, B. -T.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 86 (04): : 539 - 543
  • [40] Thermodynamic analysis of the MOVPE growth of InxGa1-xN
    Koukitu, A
    Takahashi, N
    Taki, T
    Seki, H
    JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 306 - 311