Si-doped InGaN films grown on GaN films

被引:0
|
作者
机构
[1] Nakamura, Shuji
[2] Mukai, Takashi
[3] Senoh, Masayuki
来源
Nakamura, Shuji | 1600年 / 32期
关键词
Semiconducting films;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] SI-DOPED INGAN FILMS GROWN ON GAN FILMS
    NAKAMURA, S
    MUKAI, T
    SENOH, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (1A-B): : L16 - L19
  • [2] SI-DOPED AND GE-DOPED GAN FILMS GROWN WITH GAN BUFFER LAYERS
    NAKAMURA, S
    MUKAI, T
    SENOH, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9A): : 2883 - 2888
  • [3] CD-DOPED INGAN FILMS GROWN ON GAN FILMS
    NAKAMURA, S
    IWASA, N
    NAGAHAMA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (3A): : L338 - L341
  • [4] Cd-doped InGaN films grown on GaN films
    Nakamura, Shuji
    Iwasa, Naruhito
    Nagahama, Shin-ichi
    Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (3 A):
  • [5] Optical properties of Si-doped GaN films
    Yang, HC
    Lin, TY
    Huang, MY
    Chen, YF
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6124 - 6127
  • [6] Properties of Si-doped GaN films grown using multiple AlN interlayers
    Code 6800, Electronics Sci. and Technol. Div., Naval Research Laboratory, Washington, DC 20375, United States
    Appl Phys Lett, 20 (3141-3143):
  • [7] Properties of Si-doped GaN films grown using multiple AlN interlayers
    Koleske, DD
    Twigg, ME
    Wickenden, AE
    Henry, RL
    Gorman, RJ
    Freitas, JA
    Fatemi, M
    APPLIED PHYSICS LETTERS, 1999, 75 (20) : 3141 - 3143
  • [8] Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films
    Monish, Mohammad
    Major, S. S.
    PHYSICA SCRIPTA, 2024, 99 (02)
  • [9] Characterization of high quality continuous GaN films grown on Si-doped cracked GaN template
    Soh, CB
    Zhang, J
    Chi, DZ
    Chua, SJ
    NEW APPLICATIONS FOR WIDE-BANDGAP SEMICONDUCTORS, 2003, 764 : 189 - 195