Polarized Raman spectroscopy of multilayer Ge/Si(001) quantum dot heterostructures

被引：0
|
作者：
机构：
[1] Baranov, A.V.
[2] Fedorov, A.V.
[3] Perova, T.S.
[4] Moore, R.A.
[5] Solosin, S.
[6] Yam, V.
[7] Bouchier, D.
[8] Le Thanh, V.
来源：
Perova, T.S. (perovat@tcd.ie) | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
    Liu, Zhi
    Cheng, Buwen
    Hu, Weixuan
    Su, Shaojian
    Li, Chuanbo
    Wang, Qiming
    NANOSCALE RESEARCH LETTERS, 2012, 7
  • [42] Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
    Liu, Zhi
    Cheng, Buwen
    Hu, Weixuan
    Su, Shaojian
    Li, Chuanbo
    Wang, Qiming
    Nanoscale Research Letters, 2012, 7 : 1 - 11
  • [43] Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111)
    Boscherini, F
    Capellini, G
    Di Gaspare, L
    Rosei, F
    Motta, N
    Mobilio, S
    APPLIED PHYSICS LETTERS, 2000, 76 (06) : 682 - 684
  • [44] Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots
    S. V. Kondratenko
    A. S. Nikolenko
    O. V. Vakulenko
    S. L. Golovinskiy
    Yu. N. Kozyrev
    M. Yu. Rubezhanskaya
    A. I. Vodyanitsky
    Semiconductors, 2007, 41 : 935 - 938
  • [45] ATOMISTIC STUDY OF DISLOCATION NUCLEATION IN GE/(001)SI HETEROSTRUCTURES
    ICHIMURA, M
    NARAYAN, J
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1995, 72 (02): : 281 - 295
  • [46] Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures
    Jayesh Bharathan
    Honghui Zhou
    Jagdish Narayan
    George Rozgonyi
    Gary E. Bulman
    Journal of Electronic Materials, 2014, 43 : 3196 - 3203
  • [47] Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures
    Bharathan, Jayesh
    Zhou, Honghui
    Narayan, Jagdish
    Rozgonyi, George
    Bulman, Gary E.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (09) : 3196 - 3203
  • [48] Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots
    Kondratenko, S. V.
    Nikolenko, A. S.
    Vakulenko, O. V.
    Golovinskiy, S. L.
    Kozyrev, Yu. N.
    Rubezhanskaya, M. Yu.
    Vodyanitsky, A. I.
    SEMICONDUCTORS, 2007, 41 (08) : 935 - 938
  • [49] Ellipsometry and Raman spectroscopy of MBE grown undoped Si-Si0.78Ge0.22/(001)Si superlattices
    Mironov, OA
    Phillips, PJ
    Parker, EHC
    Mironov, M
    Gnezdilov, VP
    Ushakov, V
    Eremenko, VV
    MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1997, 3182 : 216 - 222
  • [50] Evaluation of Quantum Confinement Effect in Nanocrystal Si Dot Layer by Raman Spectroscopy
    Mizukami, Y.
    Kosemura, D.
    Numasawa, Y.
    Ohshita, Y.
    Ogura, A.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (11) : 8700 - 8703
12345