Growth of 3C-SiC layers on Si substrates with a novel stress relaxation structure

被引：0

作者：

Irokawa, Y. ^{[1
]}

Kodama, M. ^{[1
]}

Kachi, T. ^{[1
]}

机构：

[1] Toyota Ctrl. Res. Devmt. Lab. Inc., Nagakute, Aichi 480-1192, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 10期

关键词：

Chemical vapor deposition - Crystal structure - Current voltage characteristics - Epitaxial growth - Raman spectroscopy - Semiconducting silicon - Silicon carbide - Stress relaxation;

D O I：

10.1143/jjap.40.5907

中图分类号：

学科分类号：

摘要：

Silicon (Si) substrates having cavities immediately beneath the surface layer were used as a stress relaxation structure in 3C-SiC heteroepitaxial growth on Si substrates. Single crystalline 3C-SiC layers were grown on these Si substrates by means of low pressure chemical vapor deposition (LPCVD). The layers' quality was characterized by micro-Raman spectroscopy and current-voltage (I-V) characteristics. These results revealed that this structure improved the crystal quality in the 3C-SiC layers.

引用

页码：5907 / 5908