EPITAXIAL GROWTH OF SILICON USING DICHLOROSILANE: GROWTH ON SINGLE-CRYSTAL HEMISPHERES.

Dichlorosilane has been used to deposit silicon on single-crystal silicon substrates and hemispheres. The growth rate using single-crystals substrates was found to be orientation independent, unlike results reported for silicon tetrachloride. The growth morphology on the major low-index planes using hemispheres is significantly different, and was found to be dependent on surface preparation. The growth rate on the hemispheres seemed to be controlled mainly by the geometry of the sample, the fastest growth occurring at the apex of the hemisphere. This observation is explained in terms of a simple boundary-layer model.