GROWTH OF SEMICONDUCTOR LAYERS UNDER NATURAL CONVECTION CONDITIONS.

被引：0
|
作者：
Dranchuk, S.N. [1 ]
Dakhovskii, I.V. [1 ]
Litvin, A.A. [1 ]
Mokritskii, V.A. [1 ]
机构：
[1] Odessa Polytechnical Inst, USSR, Odessa Polytechnical Inst, USSR
来源：
Theoretical Foundations of Chemical Engineering | 1985年 / 19卷 / 05期
关键词：
MASS TRANSFER - Mathematical Models;
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摘要：
A one-dimensional differential equation for forced diffusion under natural convection conditions has been solved which represents the mass transfer of a substance during epitaxy by the forced cooling of a melt-solution limited by two horizontally placed substrates. The relationships obtained for the dependence of the concentration distribution of a solute throughout the volume of the solution, the rate of growth, and the thickness of the layers on the principal epitaxy process parameters have been analyzed. It is shown that under conditions of diffusion-convective mass transfer the rate of growth and thickness of the layer on the upper substrate is greater than on the lower. Good agreement has been shown between the theoretical results and experimental data obtained in the autoepitaxy of layers of gallium phosphite.
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页码：384 / 391
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