Selective epitaxial growth on (100) vicinal GaAs surfaces by atmospheric pressure-metalorganic chemical vapor deposition using diethylgalliumchloride

被引：0

|

作者：

机构：

[1] Yamaguchi, Ko-ichi

[2] Okamoto, Kotaro

来源：

Yamaguchi, Ko-ichi | 1600年 / 30期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[21] ATOM BEAM-IRRADIATION EFFECTS ON SELECTIVE EPITAXIAL-GROWTH OF GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
YAMAGUCHI, KI
OKAMOTO, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (09): : L1489 - L1492
[22] Natural superstep formed on GaAs vicinal surface by metalorganic chemical vapor deposition
Fukui, Takashi, 1600, (29):
[23] EQUILIBRIUM MULTIATOMIC STEP STRUCTURE OF GAAS(001) VICINAL SURFACES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KASU, M
KOBAYASHI, N
APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1262 - 1264
[24] Epitaxial growth of lithium niobate film using metalorganic chemical vapor deposition
Akiyama, Yasunobu
Shitanaka, Katsuya
Murakami, Hiroshi
Shin, Young-Sik
Yoshida, Michihide
Imaishi, Nobuyuki
THIN SOLID FILMS, 2007, 515 (12) : 4975 - 4979
[25] Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition
Zhang, W
Lloyd, NS
Osman, K
Bonar, JM
Hamel, JS
Bagnall, DM
MICROELECTRONIC ENGINEERING, 2004, 73-4 : 514 - 518
[26] Selective growth of GaAs/Si by one-step low-pressure metalorganic chemical vapor deposition
Sato, Kiyotaka, 1600, (30):
[27] EPITAXIAL-GROWTH OF CUBIC GAN ON (111)GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
HONG, CH
WANG, K
PAVLIDIS, D
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) : 213 - 218
[28] STEP ORDERING DURING FRACTIONAL-LAYER SUPERLATTICE GROWTH ON GAAS(001) VICINAL SURFACES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
SAITO, H
UWAI, K
TOKURA, Y
FUKUI, T
APPLIED PHYSICS LETTERS, 1993, 63 (01) : 72 - 74
[29] Multi-atomic steps on metalorganic chemical vapor deposition-growth GaAs vicinal surfaces studied by atomic force microscopy
Kasu, Makoto
Fukui, Takashi
Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (7 A):
[30] Asymmetric growth behavior of selectively grown InP epilayers on vicinal (100) InP by low pressure metalorganic chemical vapor deposition
Lee, T
Moon, Y
Yoon, E
COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 239 - 242

← 1 2 3 4 5 →