共 50 条
- [15] Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition Journal of Electronic Materials, 2000, 29 : 177 - 182
- [17] DOPING PROPERTIES OF GAAS SELECTIVE EPILAYERS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10A): : L1377 - L1380
- [19] SELECTIVE EPITAXIAL-GROWTH OF ALGAAS BY ATMOSPHERIC-PRESSURE - MOCVD USING DIETHYLGALLIUMCHLORIDE AND DIETHYLALUMINIUMCHLORIDE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (08): : 1408 - 1414
- [20] ANISOTROPIC RIDGE GROWTH BY STEP-FLOW-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING DIETHYLGALLIUMCHLORIDE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (11A): : 4885 - 4888