Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits

被引：0

作者：

Flandre, Denis ^{[1
]}

机构：

[1] Universite Catholique de Louvain, Louvain-la-Neuve, Belgium

来源：

Materials science & engineering. B, Solid-state materials for advanced technology | 1995年 / B29卷 / 1-3期

关键词：

CMOS integrated circuits - Digital integrated circuits - High temperature applications - High temperature operations - High temperature properties - Integrated circuit layout - Linear integrated circuits - MOSFET devices - Performance - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The high temperature characteristics of devices and circuits realized in complementary metal oxide semiconductor (CMOS) technology on silicon-on-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable process for the realization of electronic circuits operating at up to more than 300 °C.

引用

页码：7 / 12

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