PHOTOLUMINESCENCE STUDY OF GaAs GROWN DIRECTLY ON Si SUBSTRATES.

被引：0
作者：
Enatsu, Masao [1 ]
Shimizu, Masafumi [1 ]
Mizuki, Toshio [1 ]
Sugawara, Kazushi [1 ]
Sakurai, Takeshi [1 ]
机构：
[1] Sharp Corp, Tenri, Jpn, Sharp Corp, Tenri, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 09期
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摘要：
14
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页码：1468 / 1471
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