GaAs and InP nanohole arrays fabricated by reactive beam etching using highly ordered alumina membranes

被引:0
作者
Nakao, Masashi [2 ]
Oku, Satoshi [2 ]
Tamamura, Toshiaki [2 ]
Yasui, Kenshi [1 ,2 ]
Masuda, Hideki [1 ,2 ]
机构
[1] Department of Applied Chemistry, Faculty of Engineering, Tokyo Metropolitan University, 1-1 Minami-Osawa, 192-0300 Hachioji, Tokyo, Japan
[2] NNT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, 243-0198 Atsugi, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 2 B期
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页码:1052 / 1055
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