GaAs and InP nanohole arrays fabricated by reactive beam etching using highly ordered alumina membranes

被引：0

作者：

Nakao, Masashi ^{[2
]}

Oku, Satoshi ^{[2
]}

Tamamura, Toshiaki ^{[2
]}

Yasui, Kenshi ^{[1
,2
]}

Masuda, Hideki ^{[1
,2
]}

机构：

[1] Department of Applied Chemistry, Faculty of Engineering, Tokyo Metropolitan University, 1-1 Minami-Osawa, 192-0300 Hachioji, Tokyo, Japan

[2] NNT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, 243-0198 Atsugi, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 2 B期

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页码：1052 / 1055