Epitaxial growth and properties of MnAs/GaAs/MnAs trilayer heterostructures

被引：0
|
作者：
Department of Electronic Engineering, Univ. Tokyo, 7-3-1 Hongo, B., Tokyo, Japan [1 ]
机构：
来源：
J Magn Magn Mater | / 719-721期
关键词：
This work is supported by [!text type='JS']JS[!/text]PS Research for the Future Program on `Atomic-Scale Surface and Interface Dynamics’ ([!text type='JS']JS[!/text]PS-RFTF97P00202); and a Grant-in-Aid for Scientific Research on the Priority Area `Spin Controlled Semiconductor Nanostructures’ from the Ministry of Education; Science; Sports and Culture. M.T. also thanks the support from the PRESTO Program of [!text type='JS']JS[!/text]T; Murata Foundation; and Asahi-Glass Foundation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
10
引用
收藏
相关论文
共 50 条
12345