Exciton recombination in Te-rich ZnSexTe1-x epilayers

被引:0
|
作者
机构
来源
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 74期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Epitaxial growth of ZnSexTe1-x by the VPE method and its photoluminescence
    Mochizuki, K
    Oguri, H
    Kyotani, T
    Isshiki, M
    APPLIED SURFACE SCIENCE, 1996, 92 : 79 - 83
  • [22] Sulfur-induced exciton localization in Te-rich ZnSTe alloy
    Yang, XD
    Xu, ZY
    Sun, Z
    Ji, Y
    Sun, BQ
    Sou, IK
    Ge, WK
    APPLIED PHYSICS LETTERS, 2005, 86 (16) : 1 - 3
  • [23] Structural and electronic properties of the Te-rich ZnOxTe1-x
    Zhao, Chuan - Zhen
    Zheng, Kai-Yue
    Wang, Yu-Li
    COMPUTATIONAL MATERIALS SCIENCE, 2023, 228
  • [24] An approximation to the optical absorption spectra of the ternary compound ZnSexTe1-x
    Salcedo, JC
    Giraldo, J
    Camacho, A
    REVISTA MEXICANA DE FISICA, 1998, 44 : 119 - 121
  • [25] Sinusoidally modulated ZnSexTe1-x superlattices:: Fabrication and structural studies
    Reimer, PM
    Buschert, JR
    Lee, S
    Furdyna, JK
    PHYSICAL REVIEW B, 2000, 61 (12) : 8388 - 8392
  • [26] OHMIC ELECTRICAL CONTACTS TO P-TYPE ZNTE AND ZNSEXTE1-X
    AVEN, M
    GARWACKI, W
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (10) : 1063 - &
  • [27] Thin-film ZnSexTe1-x/ZnSe oxygen sensitive structures
    Skobeeva, V.M.
    Dali, A.K.
    Sensors and Actuators, B: Chemical, 1995, B26 (1 -3 pt 1): : 116 - 118
  • [28] Growth and characterisation of Hg1-xCdxTe (0.21 < x < 0.36)epilayers grown from Te-rich solution by the dipping technique
    Solid State Physics Lab, Delhi, India
    J Cryst Growth, 1-2 (19-24):
  • [29] Growth and characterisation of Hg1-xCdxTe (0.21<x<0.36) epilayers grown from Te-rich solution by the dipping technique
    Gupta, SC
    Sitharaman, S
    Nagpal, A
    Gautam, M
    Berlouis, LEA
    JOURNAL OF CRYSTAL GROWTH, 1996, 165 (1-2) : 19 - 24
  • [30] PREPARATION OF THIN FILMS OF ZNSE ZNTE AND ZNSEXTE1-X BY FLASH EVAPORATION
    NAKAMURA, S
    FUKAI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (12) : 1473 - &