In-diffusion and isothermal annealing of iron-related defects in Czochralski N-type silicon

被引：0
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作者：
Tanaka, Shuji [1 ]
Kitagawa, Hajime [1 ]
机构：
[1] Fukuoka Inst of Technology, Fukuoka, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1998年 / 37卷 / 1 A-B期
关键词：
Applications; (APP); -; Experimental; (EXP);
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摘要：
Electrically active iron-related defects in Czochralski (CZ) n-type silicon have been studied using deep level transient spectroscopy (DLTS) and the Hall effect. Iron-related defects observed in CZ n-type silicon are identical to those in floating zoned (FZ) n-type silicon. These observed defects can be related to complexes, including iron atoms.
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