Atomic force microscopy investigation of ion-bombarded InP: effect of angle of ion bombardment

被引：0
|
作者：
Univ of Transkei, Umtata, South Africa [1 ]
机构：
来源：
Surf Interface Anal | / 8卷 / 503-510期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
17
引用
收藏
相关论文
共 50 条
  • [1] Atomic force microscopy investigation of ion-bombarded InP: Effect of angle of ion bombardment
    Demanet, CM
    Sankar, KV
    Malherbe, JB
    SURFACE AND INTERFACE ANALYSIS, 1996, 24 (08) : 503 - 510
  • [2] Atomic force microscopy investigation of noble gas ion bombardment on InP: Effect of ion energy
    Demanet, CM
    Sankar, KV
    Malherbe, JB
    vanderBerg, NG
    Odendaal, RQ
    SURFACE AND INTERFACE ANALYSIS, 1996, 24 (08) : 497 - 502
  • [3] Scanning force microscopy investigation of ion bombarded InP
    Demanet, CM
    APPLIED SURFACE SCIENCE, 1998, 135 (1-4) : 53 - 58
  • [4] ATOMIC-FORCE MICROSCOPY INVESTIGATION OF ARGON-BOMBARDED INP - EFFECT OF ION DOSE DENSITY
    DEMANET, CM
    MALHERBE, JB
    VANDERBERG, NG
    SANKAR, V
    SURFACE AND INTERFACE ANALYSIS, 1995, 23 (7-8) : 433 - 439
  • [5] Nanocone formation on ion-bombarded InP surfaces
    Kramczynski, Detlef
    Gnaser, Hubert
    APPLIED SURFACE SCIENCE, 2015, 355 : 653 - 659
  • [6] AN INVESTIGATION OF ION-BOMBARDED SILICON BY ELLIPSOMETRY AND CHANNELING EFFECT
    LOHNER, T
    MEZEY, G
    KOTAI, E
    MANUABA, A
    PASZTI, F
    DEVENYI, A
    GYULAI, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 199 (1-2): : 405 - 408
  • [7] ATOMIC MIGRATION AND TRAPPING IN ION-BOMBARDED METALS
    MYERS, SM
    JOURNAL OF METALS, 1987, 39 (07): : A32 - A32
  • [8] Investigation of ion-bombarded conducting polymer films by scanning electrochemical microscopy (SECM)
    G. Wittstock
    Tim Asmus
    Thomas Wilhelm
    Fresenius' Journal of Analytical Chemistry, 2000, 367 : 346 - 351
  • [9] Investigation of ion-bombarded conducting polymer films by scanning electrochemical microscopy (SECM)
    Wittstock, G
    Asmus, T
    Wilhelm, T
    FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 2000, 367 (04): : 346 - 351
  • [10] EPR INVESTIGATION OF DEFECT FORMATION IN ION-BOMBARDED SILICON
    GERASIMENKO, NN
    SMIRNOV, LS
    DVURECHE.AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (09): : 1487 - +
12345