EXPERIMENTAL EVALUATION OF X-BAND GaAs FET MIXERS USING SINGLE AND DUAL-GATE DEVICES.

被引：0

作者：

Cripps, S.C.

Nielsen, O.

Turner, J.A.

Parker, D.

机构：

来源：

| 1977年

关键词：

Microwave devices - TRANSISTORS; FIELD EFFECT - Applications;

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学科分类号：

摘要：

This paper begins with an assessment of suitable devices and circuit configurations for mixer applications, and then presents experimental results from different circuit configurations using commercially available 1 micron single-gate devices. A dual-gate 1 micron FET is then described, which has been specifically developed for mixer applications. Experimental results are presented for this device in a simple microwave circuit which yields 11 dB conversion gain with an associated DSB noise figure of 6. 5 dB at 10 GHz, using a 30 MHz I. F. The text of this paper is in digest form.

引用

页码：285 / 287