Radiation-resistant photoconductivity of doped silicon under 17 MeV proton bombardment

被引：0

作者：

Kishimoto, N. ^{[1
]}

Amekura, H. ^{[1
]}

Kono, K. ^{[1
]}

Saito, T. ^{[1
]}

机构：

[1] Natl Research Inst for Metals, Ibaraki, Japan

来源：

Journal of Nuclear Materials | 1996年 / 233-237卷 / Pt B期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1244 / 1248

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