Radiation-resistant photoconductivity of doped silicon under 17 MeV proton bombardment

被引：0
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作者：
Kishimoto, N. [1 ]
Amekura, H. [1 ]
Kono, K. [1 ]
Saito, T. [1 ]
机构：
[1] Natl Research Inst for Metals, Ibaraki, Japan
来源：
Journal of Nuclear Materials | 1996年 / 233-237卷 / Pt B期
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页码：1244 / 1248
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