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THEORETICAL STUDY ON THE NITROGEN ISOELECTRONIC TRAP IN GaAs1 - xPx.
被引：0
作者：
Li Hanqiu
Lu Fen
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
|
1983年
/
4卷
/
02期
关键词：
ARSENIC COMPOUNDS - GALLIUM COMPOUNDS - PHOSPHORUS COMPOUNDS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
By using a cluster model, the EHT method is used to calculate the electronic binding energy of the N-isoelectronic trap in GaAs//1// minus //xP//x. It has been shown in calculations that, in order to make major improvements on results, it would be necessary to take the excited orbitals of atoms into consideration.
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页码：187 / 190
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