Near-band-gap reflectance anisotropy in ordered Ga0.5In0.5P

被引:0
作者
Luo, J. S.
Olson, J. M.
Yong, Z.
Mascarenhas, A.
机构
来源
Physical Review B: Condensed Matter | / 55卷 / 24期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
[41]   Normal-incidence (001) second-harmonic generation in ordered Ga0.5In0.5P [J].
Sauvage, S ;
Bernard, Y ;
Sagnes, I ;
Patriarche, G ;
Glas, F ;
Le Roux, G ;
Bensoussan, M ;
Levenson, JA .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2001, 18 (01) :81-84
[42]   INFLUENCE OF PLANAR ELASTIC-DEFORMATION ON THE WIDTH OF THE BAND-GAP OF GA0.5IN0.5P SOLID-SOLUTIONS [J].
SOROKIN, VS ;
KUZNETSOV, VV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (10) :1094-1095
[43]   INCORPORATION OF ZINC IN MOCVD GROWTH OF GA0.5IN0.5P [J].
KURTZ, SR ;
OLSON, JM ;
KIBBLER, AE ;
BERTNESS, KA .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :463-469
[44]   Boron implantation into GaAs/Ga0.5In0.5P heterostructures [J].
Henkel, A ;
Delage, SL ;
diFortePoisson, MA ;
Blanck, H ;
Hartnagel, HL .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A) :175-180
[45]   RECOMBINATION VELOCITY OF THE GA0.5IN0.5P/GAAS INTERFACE [J].
AHRENKIEL, RK ;
OLSON, JM ;
DUNLAVY, DJ ;
KEYES, BM ;
KIBBLER, AE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :3002-3005
[46]   Formation and evolution of antiphase boundaries during epitaxial growth of partially ordered Ga0.5In0.5P [J].
Spiecker, E ;
Seibt, M ;
Schröter, W ;
Wenderoth, M ;
Winterhoff, R ;
Geng, C ;
Scholz, F .
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164) :179-184
[47]   ANNEALING-INDUCED NEAR-SURFACE ORDERING IN DISORDERED GA0.5IN0.5P [J].
LUO, JS ;
OLSON, JM ;
WU, MC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1755-1759
[48]   Time-Resolved Photoluminescence Study of Ordered Ga0.5In0.5P under High Pressure [J].
Kobayashi, T. ;
Minaki, M. ;
Takashima, K. ;
Uchida, K. .
Physica Status Solidi (B): Basic Research, 198 (01)
[49]   Time-resolved photoluminescence study of ordered Ga0.5In0.5P under high pressure [J].
Kobayashi, T ;
Minaki, M ;
Takashima, K ;
Uchida, K ;
Nakahara, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (01) :49-55
[50]   CORRELATION BETWEEN DEEP-LEVEL PHOTOLUMINESCENCE AND ORDERED STRUCTURE IN GA0.5IN0.5P EPILAYERS [J].
LIANG, JC ;
GAO, Y ;
ZHAO, JL .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1993, 12 (06) :355-356