Near-band-gap reflectance anisotropy in ordered Ga0.5In0.5P

被引：0
作者：
Luo, J. S.
Olson, J. M.
Yong, Z.
Mascarenhas, A.
机构：
来源：
Physical Review B: Condensed Matter | / 55卷 / 24期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
[31]   ORDERING AND DISORDERING OF DOPED GA0.5IN0.5P [J].
KURTZ, SR ;
OLSON, JM ;
FRIEDMAN, DJ ;
KIBBLER, AE ;
ASHER, S .
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (05) :431-435
[32]   Higher-interband electroreflectance of long-range ordered Ga0.5In0.5P [J].
Kita, T ;
Yamashita, K ;
Nishino, T .
PHYSICAL REVIEW B, 1996, 54 (23) :16714-16718
[33]   PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
DONG, JR ;
WANG, ZG ;
LIU, XL ;
LU, DC ;
WANG, D ;
WANG, XH .
APPLIED PHYSICS LETTERS, 1995, 67 (11) :1573-1575
[34]   Higher-interband electroreflectance of long-range ordered Ga0.5In0.5P [J].
Kita, T. ;
Yamashita, K. ;
Nishino, T. .
Physical Review B: Condensed Matter, 54 (23)
[35]   GROWTH-MECHANISM OF CUPT-TYPE ORDERED GA0.5IN0.5P FILM [J].
KURIMOTO, T ;
HAMADA, N .
SUPERLATTICES AND MICROSTRUCTURES, 1991, 10 (03) :379-383
[36]   Interdiffusion effects at long-range ordered Ga0.5In0.5P and GaAs heterointerfaces [J].
Yamashita, K ;
Kita, T ;
Nishino, T ;
Wang, Y ;
Murase, K ;
Geng, C ;
Scholz, F ;
Schweizer, H .
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, :154-157
[37]   Spin-polarized excitons in long-range ordered Ga0.5In0.5P [J].
Kita, T ;
Bhattacharya, K ;
Yamashita, K ;
Nishino, T ;
Geng, C ;
Scholz, F ;
Schweizer, H .
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, :525-528
[38]   EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].
GOMYO, A ;
SUZUKI, T ;
KOBAYASHI, K ;
KAWATA, S ;
HINO, I ;
YUASA, T .
APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675
[39]   Boron implantation into GaAs/Ga0.5In0.5P heterostructures [J].
Thomson-CSF, Orsay, France .
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 1 A (175-180)
[40]   EFFECTS OF GAAS-SUBSTRATE SURFACE MISORIENTATION FROM (001) ON BAND-GAP ENERGY IN GA0.5IN0.5P [J].
GOMYO, A ;
SUZUKI, T ;
KOBAYASHI, K ;
KAWATA, S ;
HOTTA, H ;
HINO, I .
NEC RESEARCH & DEVELOPMENT, 1994, 35 (02) :134-143
12345