LONGITUDINAL MODE BEHAVIORS OF 1. 5 mu M RANGE GaInAsP/InP DISTRIBUTED FEEDBACK LASERS.

被引:0
|
作者
Itaya, Yoshio
Matsuoka, Takashi
Kuroiwa, Koichi
Ikegami, Tetsuhiko
机构
[1] Atsugi Electrical Communication Laboratory, Nippon Telegraph and Teleohone Public Corporation, Kanagawa, 243-01, Japan
[2] Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Kanagawa, 243-01, Japan
来源
IEEE Journal of Quantum Electronics | 1984年 / QE-20卷 / 03期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:230 / 235
相关论文
共 50 条
  • [11] 1.5 MU-M GAINASP/INP DISTRIBUTED REFLECTOR (DR) LASERS WITH SCH STRUCTURE
    ARIMA, I
    SHIM, JI
    ARAI, S
    MORITA, I
    SOMCHAL, R
    SUEMATSU, Y
    KOMORI, K
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (06) : 385 - 387
  • [12] 1. 3 mu M InGaAsP/InP DOUBLE-CHANNEL PLANAR BURIED HETEROSTRUCTURE LASERS.
    Zhao Songshan
    Wang Dechao
    Wu Youyu
    Wang Yuzhang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1986, 7 (03): : 324 - 326
  • [13] EFFECTS OF ZINC DOPING OF THE ANTIMELTBACK LAYER ON 1. 55- mu m InGaAsP/InP LASERS.
    Feldman, R.D.
    Oron, M.
    Lum, R.M.
    Ballman, A.A.
    Hart, R.M.
    1600, (57):
  • [14] STUDY ON COMPLETE SINGLE-LONGITUDINAL-MODE OSCILLATION OF DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS.
    Tada, Kunio
    Nakano, Yoshiaki
    Journal of the Faculty of Engineering, the University of Tokyo, Series A, 1986, (24): : 26 - 27
  • [15] LONGITUDINAL-MODE CHARACTERISTICS FOR 1.3-MU-M GAINASP-INP DFB LASERS JUST BELOW THE THRESHOLD CURRENT
    OKUDA, H
    KINOSHITA, J
    HIRAYAMA, Y
    UEMATSU, Y
    ELECTRONICS LETTERS, 1983, 19 (10) : 362 - 363
  • [16] TEMPERATURE-DEPENDENCE OF LASING CHARACTERISTICS OF INGAASP/INP DISTRIBUTED FEEDBACK LASERS IN 1.5 MU-M RANGE
    AKIBA, S
    UTAKA, K
    SAKAI, K
    MATSUSHIMA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (12): : 1736 - 1740
  • [17] NARROW SPECTRAL LINEWIDTH 1.5 MU-M GAINASP INP DISTRIBUTED BRAGG REFLECTOR (DBR) LASERS
    TAKAHASHI, M
    MICHITSUJI, Y
    YOSHIMURA, M
    YAMAZOE, Y
    NISHIZAWA, H
    SUGIMOTO, T
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) : 1280 - 1287
  • [18] FABRICATION AND LASING PROPERTIES OF A NOVEL SINGLE LONGITUDINAL MODE 1.5-MU-M GAINASP-INP DISTRIBUTED REFLECTOR (DR) LASER
    KOMORI, K
    SUZUKI, H
    LEE, KS
    ARAI, S
    SUEMATSU, Y
    AOKI, M
    PELLEGRINO, S
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 341 - 343
  • [19] BIT ERROR-RATE SATURATION DUE TO MODE-PARTITION NOISE INDUCED BY OPTICAL FEEDBACK IN 1. 5- mu M SINGLE LONGITUDINAL-MODE C3 AND DFB SEMICONDUCTOR LASERS.
    Olsson, N.A.
    Tsang, W.T.
    Temkin, H.
    Dutta, N.K.
    Logan, R.A.
    Journal of Lightwave Technology, 1985, LT-3 (02) : 215 - 218
  • [20] 1.5 MU-M GAINASP INP DISTRIBUTED BRAGG REFLECTOR LASERS WITH BUILT-IN OPTICAL-WAVEGUIDE
    MIKAMI, O
    SAITOH, T
    NAKAGOME, H
    ELECTRONICS LETTERS, 1982, 18 (11) : 458 - 460