共 2 条
- [1] Low temperature growth of 3C-SiC on silicon for advanced substrate development SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 305 - 308
- [2] Improvement of 3C-SiC surface morphology on Si(100) by adding HCl using atmospheric CVD SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 257 - 260