共 50 条
- [1] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 958 - 959
- [3] SOME FEATURES OF SECOND PHASE PRECIPITATES IN CHROMIUM-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SOLID STATE,USSR, 1970, 11 (07): : 1612 - +
- [5] SOME FEATURES OF THE ELECTRICAL PROPERTIES OF EPITAXIAL TIN-DOPED GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (05): : 665 - 666
- [6] AMBIPOLAR CONDUCTION IN SEMIINSULATING CHROMIUM-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 1051 - 1052
- [7] PROPERTIES OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 311 - 316
- [8] PHOTOCONDUCTIVITY OF CHROMIUM-DOPED SEMI-INSULATING GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (03): : 484 - +
- [10] ELECTROABSORPTION OF NICKEL-DOPED GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 298 - 300