OPTICAL ASSESSMENT OF THE INTERACTION BETWEEN EL2 AND EL6 LEVELS IN BORON IMPLANTED GaAs.

被引:0
|
作者
Samitier, J. [1 ]
Herms, A. [1 ]
Cornet, A. [1 ]
Morante, J.R. [1 ]
Gourier, S. [1 ]
机构
[1] Univ de Barcelona, Barcelona, Spain, Univ de Barcelona, Barcelona, Spain
关键词
D O I
暂无
中图分类号
学科分类号
摘要
9
引用
收藏
页码:524 / 527
相关论文
共 50 条
  • [41] DISTINGUISHING BETWEEN EL2 AND DISLOCATION FORMATION MECHANISMS IN GAAS BY MAPPING TOPOGRAPHIES
    WANG, FC
    RAU, MF
    KURZ, J
    LIAO, DD
    CARTER, R
    JOURNAL OF CRYSTAL GROWTH, 1990, 103 (1-4) : 311 - 322
  • [42] Nonradiative investigations of photoquenching and recovery of El2 defect levels in SI-GaAs
    Fukuyama, A
    Ikari, T
    Akashi, Y
    Futagami, K
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1031 - 1035
  • [43] EL2 RELATED LEVELS IN GAAS-SI - TRANSMISSION AND DISPERSION IN INFRARED IMAGING
    CASTAGNE, M
    FILLARD, JP
    BONNAFE, J
    SOLID STATE COMMUNICATIONS, 1985, 54 (07) : 653 - 656
  • [44] EL2 RELATED LEVELS IN SEMI-INSULATING GAAS - RECAPTURE AND THERMAL REGENERATION
    FILLARD, JP
    BONNAFE, J
    CASTAGNE, M
    SOLID STATE COMMUNICATIONS, 1984, 52 (10) : 855 - 859
  • [45] ON THE OPTICAL EVALUATION OF THE EL2 DEEP LEVEL CONCENTRATION IN SEMI-INSULATING GAAS
    WALUKIEWICZ, W
    LAGOWSKI, J
    GATOS, HC
    APPLIED PHYSICS LETTERS, 1983, 43 (02) : 192 - 194
  • [46] ACTIVATION-ENERGY AND DISTRIBUTION FUNCTION OF THE EL2 DEFECT LEVEL IN SI-IMPLANTED GAAS
    BISBEE, JE
    HALDER, NC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 119 (02): : 545 - 553
  • [47] CORRELATION BETWEEN IMPLANT ACTIVATION AND EL2 CONCENTRATION IN SEMI-INSULATING GAAS
    BRIERLEY, SK
    ANDERSON, TE
    GRABINSKI, AK
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 21 - 24
  • [48] RELATION BETWEEN MICROSCOPIC EL2 FLUCTUATIONS AND NONUNIFORM PROPERTIES OF GAAS SUBSTRATES AND DEVICES
    ALT, HC
    SCHINK, H
    PACKEISER, G
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 515 - 520
  • [49] RELATIONSHIP BETWEEN THE CONCENTRATION OF DEEP EL2 CENTERS AND DISLOCATION DENSITY IN SEMIINSULATING GAAS
    KARTAVYKH, AV
    MARKOV, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 1074 - 1075
  • [50] DIRECT EVIDENCE FOR A CHARGE-CONTROLLED OPTICAL QUENCHING OF EL2 CENTERS IN SEMIINSULATING GAAS
    OHYAMA, T
    SHIMIZU, T
    KOBORI, H
    OTSUKA, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (5A): : 1889 - 1897