Zn and Si doping in {110} GaAs epilayers grown by metalorganic chemical vapor deposition

被引：0

作者：

Okamoto, Kotaro ^{[1
]}

Furuta, Mamoru ^{[1
]}

Yamaguchi, Ko-ichi ^{[1
]}

机构：

[1] Univ of Electro-Communications, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 11期

关键词：

Photoluminescence - Semiconductor Materials--Chemical Vapor Deposition - Silanes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Zn and Si doping are examined for {110} GaAs epilayers by introducing diethylzinc and silane during the course of metalorganic chemical vapor deposition. Hole concentrations of Zn doped {110} epilayers show a saturation around 1.5&middot1019 cm-3, which is one sixth of the hole concentration of {100} epilayers, and the occurrence of the saturations due to interstitially incorporated Zn atoms. Electron concentration of Si-doped {110} epilayers are lower than those of {110} epilayers, which suggests that incorporation of Si atoms into As sites occurs more frequently for {110} epilayers than for {100} epilayers.

引用

页码：2121 / 2124