Sol-gel derived PZT/RuO2 multilayer films on stainless steel substrates

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作者：

Université de Nantes, Lab. Phys. Isolants et d'Optronique, E.P.S.E., 2, rue de la Houssinière, 44322 Nantes Cedex 3, France ^{[1
]}

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来源：

Integr Ferroelectr | / 1卷 / 199-214期

关键词：

Arsenic - Deposition - Electric conductivity - Film preparation - Lead compounds - Perovskite - Ruthenium compounds - Stainless steel - Substrates - Temperature - Thin films;

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摘要：

The structural and electric properties of PZT thin films deposited by the sol-gel process on RuO2 coated stainless steel as well as on bare stainless steel were studied and compared. As-deposited amorphous RuO2 thin films on stainless steel were transformed to pure rutile-type RuO2 at temperatures ranging from 400°C to 600°C, the resistivity of which had a value less than 200 μΩ &middot cm. The PZT films processed on RuO2 needed slightly higher temperature (610°C) in order to be completely transformed into the perovskite phase than PZT on stainless steel (600°C). The films showed best ferroelectric properties when depositing it on the 100 nm thick RuO2 bottom electrodes fired at 400°C for 10 minutes. The hysteresis loops of the PZT films were more slim when being processed on RuO2 coated stainless steel than on bare stainless steel. For the RuO2 bottom electrodes the values of coercive field decreased to about 55% of those without a RuO2 layer.

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