Defects in thick epitaxial GaAs layers

被引:0
|
作者
Samic, H. [1 ]
Bourgoin, J.C. [1 ]
机构
[1] Universite Paris 7, Paris, France
来源
Materials Science Forum | 1997年 / 258-263卷 / pt 2期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:997 / 1001
相关论文
共 50 条
  • [41] SPATIALLY RESOLVED PHOTOLUMINESCENCE AT OVAL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS
    BAFLEUR, M
    MUNOZYAGUE, A
    LAURET, N
    BRABANT, JC
    JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 472 - 474
  • [42] POSITRON-ANNIHILATION STUDY OF VACANCY DEFECTS IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
    TU, XZ
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2585 - 2586
  • [43] PHOTOELECTRONIC PROPERTIES OF THE GAAS, SI EPITAXIAL LAYERS ON THE GAAS SUBSTRATE
    CZEKALAMUKALLED, Z
    KUZMINSKI, S
    TLACZALA, M
    VACUUM, 1995, 46 (5-6) : 489 - 491
  • [44] CHARACTERIZATION OF GAAS GROWN ON SI EPITAXIAL LAYERS ON GAAS SUBSTRATES
    ADOMI, K
    STRITE, S
    MORKOC, H
    NAKAMURA, Y
    OTSUKA, N
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 220 - 225
  • [45] EFFICIENT PHOTOEMISSION FROM GAAS EPITAXIAL LAYERS
    GARBE, S
    FRANK, G
    SOLID STATE COMMUNICATIONS, 1969, 7 (08) : 615 - +
  • [46] Photothermal deflection studies of GaAs epitaxial layers
    George, NA
    Vallabhan, CPG
    Nampoori, VPN
    Radhakrishnan, P
    APPLIED OPTICS, 2002, 41 (24) : 5179 - 5184
  • [48] EPITAXIAL LAYERS OF GE-DOPED GAAS
    FROLOV, IA
    BOLDYREVSKII, PB
    KOZEIKIN, BV
    SOKOLOV, EB
    INORGANIC MATERIALS, 1977, 13 (04) : 591 - 592
  • [49] Growth and characterization of GaAs epitaxial layers by MOCVD
    Hudait, MK
    Modak, P
    Krupanidhi, SB
    COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS, 1996, 421 : 281 - 286
  • [50] EPITAXIAL LAYERS OF CUINSE2 ON GAAS
    SCHUMANN, B
    GEORGI, C
    TEMPEL, A
    KUHN, G
    VANNAM, N
    NEUMANN, H
    HORIG, W
    THIN SOLID FILMS, 1978, 52 (01) : 45 - 52