Defects in thick epitaxial GaAs layers

被引：0
|
作者：
Samic, H. [1 ]
Bourgoin, J.C. [1 ]
机构：
[1] Universite Paris 7, Paris, France
来源：
Materials Science Forum | 1997年 / 258-263卷 / pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：997 / 1001
相关论文
共 50 条
  • [1] Defects in thick epitaxial GaAs layers
    Samic, H
    Bourgoin, JC
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 997 - 1001
  • [2] FACETED DEFECTS IN GAAS EPITAXIAL LAYERS
    SHAW, DW
    JOURNAL OF CRYSTAL GROWTH, 1972, 12 (03) : 249 - &
  • [3] Growth and characterization of thick epitaxial GaAs layers
    Samic, H
    Bourgoin, JC
    Pajot, B
    Bisaro, R
    Grattepain, C
    Khirouni, K
    Putero, M
    Burle, N
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 155 - 158
  • [4] Growth and characterization of thick epitaxial GaAs layers
    Samic, H
    Bourgoin, JC
    Pajot, B
    Bisaro, R
    Grattepain, C
    Khirouni, K
    Putero, M
    Burle, N
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 155 - 158
  • [5] Potential of thick GaAs epitaxial layers for pixel detectors
    Bourgoin, JC
    de Angelis, N
    Smith, K
    Bates, R
    Whitehill, C
    Meikle, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 458 (1-2): : 344 - 347
  • [6] Ion irradiation induced defects in epitaxial GaAs layers
    Arpatzanis, N
    Vlastou, R
    Konstantinidis, G
    Assmann, W
    Papastamatiou, M
    Gazis, E
    Papaioannou, GJ
    SOLID-STATE ELECTRONICS, 1998, 42 (02) : 277 - 282
  • [7] CRYSTALLOGRAPHIC DEFECTS IN (001) GAAS EPITAXIAL LAYERS GROWN BY MOCVD
    VANDEVEN, J
    WEYHER, JL
    IKINK, H
    GILING, LJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 989 - 997
  • [8] Electronic characterization of several 100 μm thick epitaxial GaAs layers
    N. Talbi
    K. Khirouni
    G. C. Sun
    H. Samic
    J. C. Bourgoin
    Journal of Materials Science: Materials in Electronics, 2008, 19 : 487 - 492
  • [9] Electronic characterization of several 100 μm thick epitaxial GaAs layers
    Talbi, N.
    Khirouni, K.
    Sun, G. C.
    Samic, H.
    Bourgoin, J. C.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 19 (05) : 487 - 492
  • [10] Characterization of thick epitaxial GaAs layers for X-ray detection
    Samic, H
    Sun, GC
    Donchev, V
    Nghia, NX
    Gandouzi, M
    Zazoui, M
    Bourgoin, JC
    El-Abbassi, H
    Rath, S
    Sellin, PJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 487 (1-2): : 107 - 112
12345